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Title: From MEMRISTOR to MEMImpedance device

The behavior of the capacitance switching of HfO{sub 2} Resistive non-volatile Memories is investigated in view of realizing a MEMImpedance (MEM-Z) device. In such a Metal Insulator Metal structure, the impedance value can be tuned by the adjustment of both resistance and capacitance values. We observe a strong variation of capacitance from positive to negative values in a single layer Metal Insulator Metal device made of HfO{sub 2} deposited by Atomic Layer Deposition, but unfortunately no memory effect is observed. However, in the case of a two layer structure, a device has been obtained with a memory effect where both resistance and capacitance values can be tuned simultaneously, with a variation of capacitance down to negative values to get an inductive behavior. Negative capacitance values are observed for voltage values near SET voltage. A schematic model based on shaped oxygen vacancy density is proposed to account for this capacitance variation. The oxygen vacancies can be either isolated or connected in the bulk of the oxide.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Univ. Grenoble Alpes, LTM (CEA-LETI/Minatec), 38000 Grenoble (France)
  2. (France)
  3. Univ. Grenoble Alpes, G2Elab, F-38000 Grenoble (France)
Publication Date:
OSTI Identifier:
22489421
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; DENSITY; DEPOSITS; ELECTRIC POTENTIAL; HAFNIUM OXIDES; LAYERS; MEMS; OXYGEN; VACANCIES