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Title: An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

Abstract

The synthesis of large-area monolayer tungsten disulphide (WS{sub 2}) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS{sub 2} crystals using tungsten hexachloride (WCl{sub 6}) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl{sub 6} in ethanol was drop-casted on SiO{sub 2}/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS{sub 2} crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS{sub 2} single crystalline monolayer can be grown using the WCl{sub 6} precursor. Our finding shows an easier and effective approach to grow WS{sub 2} monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction.

Authors:
; ; ;  [1]
  1. Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)
Publication Date:
OSTI Identifier:
22489413
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATMOSPHERES; CHEMICAL VAPOR DEPOSITION; DENDRITES; DISTRIBUTION; EQUIPMENT; ETHANOL; MONOCRYSTALS; NUCLEATION; PRECURSOR; SILICON OXIDES; SUBSTRATES; TUNGSTEN; TUNGSTEN CHLORIDES; TUNGSTEN SULFIDES

Citation Formats

Thangaraja, Amutha, Shinde, Sachin M., Kalita, Golap, and Tanemura, Masaki. An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor. United States: N. p., 2016. Web. doi:10.1063/1.4941393.
Thangaraja, Amutha, Shinde, Sachin M., Kalita, Golap, & Tanemura, Masaki. An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor. United States. https://doi.org/10.1063/1.4941393
Thangaraja, Amutha, Shinde, Sachin M., Kalita, Golap, and Tanemura, Masaki. 2016. "An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor". United States. https://doi.org/10.1063/1.4941393.
@article{osti_22489413,
title = {An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor},
author = {Thangaraja, Amutha and Shinde, Sachin M. and Kalita, Golap and Tanemura, Masaki},
abstractNote = {The synthesis of large-area monolayer tungsten disulphide (WS{sub 2}) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS{sub 2} crystals using tungsten hexachloride (WCl{sub 6}) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl{sub 6} in ethanol was drop-casted on SiO{sub 2}/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS{sub 2} crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS{sub 2} single crystalline monolayer can be grown using the WCl{sub 6} precursor. Our finding shows an easier and effective approach to grow WS{sub 2} monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction.},
doi = {10.1063/1.4941393},
url = {https://www.osti.gov/biblio/22489413}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 108,
place = {United States},
year = {Mon Feb 01 00:00:00 EST 2016},
month = {Mon Feb 01 00:00:00 EST 2016}
}