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Title: Intrinsic magnetic refrigeration of a single electron transistor

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.
Authors:
;  [1] ; ;  [2]
  1. Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
  2. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
Publication Date:
OSTI Identifier:
22489412
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; ALUMINIUM; CRYOSTATS; DOPED MATERIALS; ELECTRONS; EVAPORATION; IMPURITIES; REFRIGERATION; TRANSISTORS