skip to main content

Title: Top-gated field-effect LaAlO{sub 3}/SrTiO{sub 3} devices made by ion-irradiation

We present a method to fabricate top-gated field-effect devices in a LaAlO{sub 3}/SrTiO{sub 3} two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting T{sub c} can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.
Authors:
; ; ; ; ; ;  [1] ; ; ; ; ;  [2] ;  [3] ;  [4]
  1. Laboratoire de Physique et d'Etude des Matériaux-CNRS-ESPCI ParisTech-UPMC, PSL Research University, 10 Rue Vauquelin - 75005 Paris (France)
  2. Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France)
  3. Laboratoire de Photonique et de Nanostructures LPN-CNRS, Route de Nozay, 91460 Marcoussis and Universit Paris Sud, 91405 Orsay (France)
  4. DSM/IRAMIS/SPEC - CNRS UMR 3680, CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France)
Publication Date:
OSTI Identifier:
22489410
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; DEPOSITION; ELECTRIC POTENTIAL; ELECTRON GAS; IRRADIATION; LANTHANUM COMPOUNDS; OXYGEN IONS; PHASE TRANSFORMATIONS; STRONTIUM TITANATES; SUPERCONDUCTORS; TWO-DIMENSIONAL SYSTEMS