Top-gated field-effect LaAlO{sub 3}/SrTiO{sub 3} devices made by ion-irradiation
- Laboratoire de Physique et d'Etude des Matériaux-CNRS-ESPCI ParisTech-UPMC, PSL Research University, 10 Rue Vauquelin - 75005 Paris (France)
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France)
- Laboratoire de Photonique et de Nanostructures LPN-CNRS, Route de Nozay, 91460 Marcoussis and Universit Paris Sud, 91405 Orsay (France)
- DSM/IRAMIS/SPEC - CNRS UMR 3680, CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France)
We present a method to fabricate top-gated field-effect devices in a LaAlO{sub 3}/SrTiO{sub 3} two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting T{sub c} can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.
- OSTI ID:
- 22489410
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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