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Title: The origins of near band-edge transitions in hexagonal boron nitride epilayers

Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3‚ÄČeV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5‚ÄČeV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained.
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Publication Date:
OSTI Identifier:
22489406
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMMONIA; BORON NITRIDES; CARBON; EV RANGE 01-10; FLOW RATE; IMPURITIES; NITROGEN; PEAKS; PHOTOLUMINESCENCE; PROBES; RECOMBINATION; SPECTROSCOPY; VACANCIES