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Title: Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AlGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10 K. Both m-plane and c-plane QWs show a small energy shift (1.6–2.6 meV) compared to AlGaAs/GaAs (3.5–5.2 meV) and AlSb/InAs (6.2 and 12 meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AlGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.
Authors:
 [1] ;  [2] ;  [2] ;  [1] ;  [3] ;  [1] ;  [2]
  1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (Japan)
  3. Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
Publication Date:
OSTI Identifier:
22489404
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM ARSENIDES; QUANTUM WELLS; TEMPERATURE DEPENDENCE