Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells
Abstract
The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AlGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10 K. Both m-plane and c-plane QWs show a small energy shift (1.6–2.6 meV) compared to AlGaAs/GaAs (3.5–5.2 meV) and AlSb/InAs (6.2 and 12 meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AlGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.
- Authors:
-
- Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
- Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
- Publication Date:
- OSTI Identifier:
- 22489404
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM ARSENIDES; QUANTUM WELLS; TEMPERATURE DEPENDENCE
Citation Formats
Kotani, Teruhisa, Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Arita, Munetaka, Hoshino, Katsuyuki, Arakawa, Yasuhiko, and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells. United States: N. p., 2016.
Web. doi:10.1063/1.4941088.
Kotani, Teruhisa, Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Arita, Munetaka, Hoshino, Katsuyuki, Arakawa, Yasuhiko, & Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells. United States. https://doi.org/10.1063/1.4941088
Kotani, Teruhisa, Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Arita, Munetaka, Hoshino, Katsuyuki, Arakawa, Yasuhiko, and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. 2016.
"Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells". United States. https://doi.org/10.1063/1.4941088.
@article{osti_22489404,
title = {Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells},
author = {Kotani, Teruhisa and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 and Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567 and Arita, Munetaka and Hoshino, Katsuyuki and Arakawa, Yasuhiko and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505},
abstractNote = {The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AlGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10 K. Both m-plane and c-plane QWs show a small energy shift (1.6–2.6 meV) compared to AlGaAs/GaAs (3.5–5.2 meV) and AlSb/InAs (6.2 and 12 meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AlGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.},
doi = {10.1063/1.4941088},
url = {https://www.osti.gov/biblio/22489404},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 108,
place = {United States},
year = {Mon Feb 01 00:00:00 EST 2016},
month = {Mon Feb 01 00:00:00 EST 2016}
}
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