skip to main content

Title: Anisotropic pyrochemical microetching of poly(tetrafluoroethylene) initiated by synchrotron radiation-induced scission of molecule bonds

We developed a process for micromachining polytetrafluoroethylene (PTFE): anisotropic pyrochemical microetching induced by synchrotron X-ray irradiation. X-ray irradiation was performed at room temperature. Upon heating, the irradiated PTFE substrates exhibited high-precision features. Both the X-ray diffraction peak and Raman signal from the irradiated areas of the substrate decreased with increasing irradiation dose. The etching mechanism is speculated as follows: X-ray irradiation caused chain scission, which decreased the number-average degree of polymerization. The melting temperature of irradiated PTFE decreased as the polymer chain length decreased, enabling the treated regions to melt at a lower temperature. The anisotropic pyrochemical etching process enabled the fabrication of PTFE microstructures with higher precision than simultaneously heating and irradiating the sample.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. University of Hyogo, 3-1-2 Kouto, Kamigori, Ako, Hyogo 678-1205 (Japan)
  2. University of Yamanashi, 4-3-11 Takeda, Kohfu, Yamanashi 400-8511 (Japan)
  3. Okayama Prefectural University, 111 Kuboki, Sousha, Okayama 719-1197 (Japan)
Publication Date:
OSTI Identifier:
22489398
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; ANISOTROPY; ETCHING; FABRICATION; IRRADIATION; MELTING POINTS; MICROSTRUCTURE; MOLECULES; POLYMERIZATION; RADIATION DOSES; SIGNALS; SUBSTRATES; SYNCHROTRON RADIATION; TEFLON; TEMPERATURE RANGE 0273-0400 K; X RADIATION; X-RAY DIFFRACTION