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Title: Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces

We demonstrate an all-optical approach to probe electronic band structure at buried interfaces involving polar semiconductors. Femtosecond optical pulses excite coherent phonons in epitaxial GaP films grown on Si(001) substrate. We find that the coherent phonon amplitude critically depends on the film growth conditions, specifically in the presence of antiphase domains, which are independently characterized by transmission electron microscopy. We determine the Fermi levels at the buried interface of GaP/Si from the coherent phonon amplitudes and demonstrate that the internal electric fields are created in the nominally undoped GaP films as well as the Si substrates, possibly due to the carrier trapping at the antiphase boundaries and/or at the interface.
Authors:
 [1] ; ; ; ; ;  [2] ; ;  [3] ;  [4]
  1. Nano Characterization Unit, National Institute for Materials Science, Tsukuba 305-0047 (Japan)
  2. Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg (Germany)
  3. Department of Physics, University of Florida, Gainesville, Florida 32611 (United States)
  4. Department of Physics and Astronomy and Pittsburgh Quantum Institute, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States)
Publication Date:
OSTI Identifier:
22489395
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLITUDES; CARRIERS; ELECTRIC FIELDS; EPITAXY; FERMI LEVEL; FILMS; GALLIUM PHOSPHIDES; INTERFACES; PHONONS; PULSES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TRAPPING