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Title: Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm{sup 2} V{sup −1} s{sup −1}.
Authors:
; ;  [1]
  1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)
Publication Date:
OSTI Identifier:
22489394
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON MOBILITY; EPITAXY; FERMI LEVEL; GRAPHENE; HYDROGEN; INTERFACES; LEAKAGE CURRENT; SCATTERING; SILICON CARBIDES; TUNING