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Title: Green electroluminescence from Tb{sub 4}O{sub 7} films on silicon: Impact excitation of Tb{sup 3+} ions by hot carriers

We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent terbium (Tb{sup 3+}) ions inherent in a Tb{sub 4}O{sub 7} film that is sandwiched between the ITO film and heavily phosphorous- or boron-doped silicon (n{sup +}-Si or p{sup +}-Si) substrate, thus forming the so-called metal-oxide-semiconductor (MOS) device. The onset voltage of such EL is below 10 V. From the current-voltage characteristic and voltage-dependent EL spectra of the aforementioned MOS device, it is derived that the Tb-related green EL results from the impact excitation of Tb{sup 3+} ions by the hot electrons (holes), which stem from the electric-field acceleration of the electrons (holes) injected from the n{sup +}-Si (p{sup +}-Si) substrate via the trap-assisted tunneling mechanism.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22489392
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON; CARRIERS; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; EXCITATION; FILMS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SUBSTRATES; TERBIUM; TERBIUM IONS; TERBIUM OXIDES; TUNNEL EFFECT