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Title: Fully CMOS-compatible titanium nitride nanoantennas

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.
Authors:
 [1] ;  [2] ; ; ;  [3] ; ;  [4]
  1. Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States)
  2. (United States)
  3. Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States)
  4. Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22489390
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON; ELECTRON BEAMS; EPITAXY; FABRICATION; HARDNESS; INFORMATION; MAGNESIUM OXIDES; MELTING POINTS; OPTICAL PROPERTIES; OXYGEN; PLASMA; PROCESSING; SCATTERING; SERVICE LIFE; SILICON; SILICON OXIDES; SPECTROSCOPY; TITANIUM NITRIDES; WEAR RESISTANCE