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Title: Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved by carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.
Authors:
;  [1]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9 (Canada)
Publication Date:
OSTI Identifier:
22489384
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; EMISSION; GALLIUM NITRIDES; LIGHT EMITTING DIODES; OPTIMIZATION; PERFORMANCE; SIMULATION; THICKNESS; TRAPPING; ULTRAVIOLET RADIATION