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Title: Publisher's Note: “Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices” [Appl. Phys. Lett. 106, 203101 (2015)]

No abstract prepared.
Authors:
; ; ;  [1]
  1. School of Electrical Engineering, Korea University, Anam-dong 5ga, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22489383
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; NITRIDES; RANDOMNESS; TANTALUM