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Title: Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [3] ;  [2] ;  [4] ;  [3] ;  [1]
  1. Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium)
  2. (Belgium)
  3. IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)
  4. TSMC, Kapeldreef 75, B-3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22489376
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY FUNCTIONAL METHOD; DESIGN; EFFECTIVE MASS; FIELD EFFECT TRANSISTORS; OXIDES; SEMICONDUCTOR MATERIALS; SIMULATION; TUNNEL EFFECT; TWO-DIMENSIONAL SYSTEMS