skip to main content

SciTech ConnectSciTech Connect

Title: Hydrogen doping in HfO{sub 2} resistance change random access memory

The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO{sub 2} resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.
Authors:
; ;  [1]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22489374
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CHARGE STATES; COULOMB CORRECTION; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; HAFNIUM OXIDES; HYDROFLUORIC ACID; HYDROGEN; HYDROGENATION; MEMORY DEVICES; MONOCLINIC LATTICES; OXYGEN; RANDOMNESS