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Title: Two-dimensional percolation threshold in confined Si nanoparticle networks

Non-percolating and percolating silicon quantum dot (QD) networks were investigated by plane-view energy filtered transmission electron microscopy (EF-TEM). The Si QD networks were prepared by plasma enhanced chemical vapor deposition on free standing 5 nm Si{sub 3}N{sub 4} membranes, followed by high temperature annealing. The percolation threshold from non-percolating to percolating networks is found to be in between a SiO{sub x} stoichiometry of SiO{sub 0.5} up to SiO{sub 0.7}. Using the EF-TEM images, key structural parameters of the Si QD ensemble were extracted and compared, i.e., their size distribution, nearest neighbor distance, and circularity. Increasing the silicon excess within the SiO{sub x} layer results in an ensemble of closer spaced, less size-controlled, and less circular Si QDs that give rise to coupling effects. Furthermore, the influence of the structural parameters on the optical and electrical Si QD ensemble properties is discussed.
Authors:
; ; ;  [1] ; ;  [2]
  1. Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg im Breisgau (Germany)
  2. Karlsruhe Nano and Micro Facility (KNMF) and Institute of Nanotechnology (INT), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
Publication Date:
OSTI Identifier:
22489372
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CHEMICAL VAPOR DEPOSITION; MEMBRANES; PLASMA; QUANTUM DOTS; SILICON; SILICON NITRIDES; SILICON OXIDES; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL SYSTEMS