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Title: Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.
Authors:
; ;  [1]
  1. Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Publication Date:
OSTI Identifier:
22489367
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DISLOCATIONS; EPITAXY; GALLIUM NITRIDES; LIFETIME; MAGNESIUM OXIDES; PRECESSION; RELAXATION; SPIN; SPIN FLIP; TEMPERATURE RANGE 0273-0400 K; VALVES