Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Journal Article · Mon Jan 25 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4940888· OSTI ID:22489367

Bhattacharya, Aniruddha; Baten, Md Zunaid; Bhattacharya, Pallab ^[1]

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1. Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

• OSTI ID: 22489367
• Journal Information: Applied Physics Letters, Vol. 108, Issue 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DISLOCATIONS
EPITAXY
GALLIUM NITRIDES
LIFETIME
MAGNESIUM OXIDES
PRECESSION
RELAXATION
SPIN
SPIN FLIP
TEMPERATURE RANGE 0273-0400 K
VALVES