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Title: Enhanced surface transfer doping of diamond by V{sub 2}O{sub 5} with improved thermal stability

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V{sub 2}O{sub 5} as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V{sub 2}O{sub 5} as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V{sub 2}O{sub 5} deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 10{sup 12} to 1.8 × 10{sup 13 }cm{sup −2} at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V{sub 2}O{sub 5} in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V{sub 2}O{sub 5} is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ; ;  [6] ;  [7]
  1. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
  2. High Magnetic Field Laboratory, Chinese Academy of Sciences, 350 Shushanhu Road, Hefei 230031, Anhui (China)
  3. (Singapore)
  4. Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086 (Australia)
  5. LSPM-CNRS, Université Paris 13, Villetaneuse 93430 (France)
  6. Department of Industrial Engineering, “Tor Vergata” University, Rome 00173 (Italy)
  7. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore)
Publication Date:
OSTI Identifier:
22489357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AIR; CARRIERS; DEPOSITION; DIAMONDS; ELECTRON TRANSFER; HYDROGEN; PHOTOELECTRON SPECTROSCOPY; RESOLUTION; SURFACES; TEMPERATURE RANGE 0273-0400 K; VANADATES; VANADIUM OXIDES