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Title: Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls

The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, INSA and University of Rouen, 76800 St Etienne du Rouvray (France)
  2. (United Kingdom)
  3. CEA, CNRS, Université Grenoble Alpes, 38000 Grenoble (France)
  4. Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Saclay, 91405 Orsay (France)
Publication Date:
OSTI Identifier:
22489356
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EV RANGE; FIELD EMISSION; GALLIUM NITRIDES; ION BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PROBES; QUANTUM WELLS; RECOMBINATION; SPECTROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY