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Title: Optically readout write once read many memory with single active organic layer

Abstract

An optically readable write once read many memory (WORM) in Ag/Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH PPV)/ITO is demonstrated in this work. Utilising characteristics of the organic light emitting diode structure of Ag/MEH PPV/ITO and electrochemical metallization of Ag, a WORM with light emitting capability can be realised. The simple fabrication process and multifunction capability of the device can be useful for future wearable optoelectronics and photomemory applications, where fast and parallel readout can be achieved by photons.

Authors:
Publication Date:
OSTI Identifier:
22489330
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTROCHEMISTRY; FABRICATION; LAYERS; LIGHT EMITTING DIODES; READOUT SYSTEMS

Citation Formats

Nguyen, Viet Cuong, and Lee, Pooi See, E-mail: pslee@ntu.edu.sg. Optically readout write once read many memory with single active organic layer. United States: N. p., 2016. Web. doi:10.1063/1.4940204.
Nguyen, Viet Cuong, & Lee, Pooi See, E-mail: pslee@ntu.edu.sg. Optically readout write once read many memory with single active organic layer. United States. https://doi.org/10.1063/1.4940204
Nguyen, Viet Cuong, and Lee, Pooi See, E-mail: pslee@ntu.edu.sg. 2016. "Optically readout write once read many memory with single active organic layer". United States. https://doi.org/10.1063/1.4940204.
@article{osti_22489330,
title = {Optically readout write once read many memory with single active organic layer},
author = {Nguyen, Viet Cuong and Lee, Pooi See, E-mail: pslee@ntu.edu.sg},
abstractNote = {An optically readable write once read many memory (WORM) in Ag/Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH PPV)/ITO is demonstrated in this work. Utilising characteristics of the organic light emitting diode structure of Ag/MEH PPV/ITO and electrochemical metallization of Ag, a WORM with light emitting capability can be realised. The simple fabrication process and multifunction capability of the device can be useful for future wearable optoelectronics and photomemory applications, where fast and parallel readout can be achieved by photons.},
doi = {10.1063/1.4940204},
url = {https://www.osti.gov/biblio/22489330}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 108,
place = {United States},
year = {Mon Jan 18 00:00:00 EST 2016},
month = {Mon Jan 18 00:00:00 EST 2016}
}