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Title: Effects of nitrogen plasma treatment on the electrical property and band structure of few-layer MoS{sub 2}

Few-layer MoS{sub 2} prepared by the chemical vapor deposition method was treated with nitrogen plasma under different radio-frequency (rf) power conditions in order to experimentally study the change in the electrical property. Control of the rf power could change the work function of MoS{sub 2} from 5.40‚ÄČeV to 5.06‚ÄČeV. It is shown that the increased rf power leads to the increased (reduced) number of nitrogen (oxygen) atoms, increasing the electron concentration and shifting the Fermi level toward conduction band. The sensitivity of the work function to the rf power provides an opportunity to tune the work function of MoS{sub 2}.
Authors:
;  [1]
  1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
Publication Date:
OSTI Identifier:
22489325
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES; EV RANGE; LAYERS; MOLYBDENUM SULFIDES; NITROGEN; OXYGEN; PLASMA; RADIOWAVE RADIATION; WORK FUNCTIONS