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Title: Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of −160 °C to 100 °C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution of oxygen vacancies is the origin of the wake-up effect.
Authors:
;  [1] ;  [2]
  1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen (Germany)
  2. Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, D-52425 Jülich (Germany)
Publication Date:
OSTI Identifier:
22489323
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITION; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRODES; FERROELECTRIC MATERIALS; HAFNIUM OXIDES; MATHEMATICAL SOLUTIONS; OXYGEN; TEMPERATURE DEPENDENCE; VACANCIES; YTTRIUM