skip to main content

Title: A comparative study of three-terminal Hanle signals in CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si tunnel junctions

We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO{sub 2}/n{sup +}-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO{sub 2}/n{sup +}-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO{sub 2}/n{sup +}-Si, even though a lot of samples with various tunnel resistances were studied in wide temperature and bias voltage ranges. Through a comparative study, it is found that the impurity-assisted tunneling magnetoresistance mechanism would not play a dominant role in the 3T Hanle signal in CoFe/SiO{sub 2}/n{sup +}-Si tunnel junctions, where the SiO{sub 2} was formed by plasma oxidation to minimize impurities.
Authors:
;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [3] ; ;  [5]
  1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of)
  2. (GIST), Gwangju 61005 (Korea, Republic of)
  3. (China)
  4. Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of)
  5. School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22489321
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; MAGNETORESISTANCE; PLASMA; SIGNALS; SILICON OXIDES; TUNNEL EFFECT