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Title: Near-ultraviolet micro-Raman study of diamond grown on GaN

Ultraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ∼3.5 μm. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction.
Authors:
; ; ;  [1] ; ;  [1] ;  [2] ;  [3] ; ; ; ;  [4]
  1. Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, Texas 78666 (United States)
  2. (United States)
  3. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)
  4. Element Six Technologies, U.S. Corporation, Santa Clara, California 95054 (United States)
Publication Date:
OSTI Identifier:
22489314
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CROSS SECTIONS; DIAMONDS; EXCITATION; GALLIUM NITRIDES; INTERFACES; LAYERS; LENGTH; POLYCRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION