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Title: Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22489296
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRODES; FABRICATION; GADOLINIUM OXIDES; INTERFACES; LAYERS; PERFORMANCE; SPIN; STABILITY; TRANSITION ELEMENTS