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Title: Controlling a three dimensional electron slab of graded Al{sub x}Ga{sub 1−x}N

Polarization induced degenerate n-type doping with electron concentrations up to ∼10{sup 20 }cm{sup −3} is achieved in graded Al{sub x}Ga{sub 1−x}N layers (x: 0% → 37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy, and electron dispersive x-ray spectroscopy confirm the gradient in the composition of the Al{sub x}Ga{sub 1−x}N layers, while Hall effect studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir.
Authors:
; ;  [1] ;  [2]
  1. Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria)
  2. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warszawa (Poland)
Publication Date:
OSTI Identifier:
22489285
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUFFERS; DOPED MATERIALS; ELECTRONS; GALLIUM NITRIDES; LAYERS; ORGANOMETALLIC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY