Crystalfield symmetries of luminescent Eu{sup 3+} centers in GaN: The importance of the {sup 5}D{sub 0} to {sup 7}F{sub 1} transition
- SUPA Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, Scotland (United Kingdom)
- Department of Mathematical and Design Engineering, Gifu University, Gifu 501-1193 (Japan)
- IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal)
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, England (United Kingdom)
- Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw (Poland)
Eu-doped GaN is a promising material with potential application not only in optoelectronics but also in magneto-optical and quantum optical devices “beyond the light emitting diode.” Its interesting spectroscopy is unfortunately complicated by spectral overlaps due to “site multiplicity,” the existence in a given sample of multiple composite centers in which Eu ions associate with intrinsic or extrinsic defects. We show here that elementary crystalfield analysis of the {sup 5}D{sub 0} to {sup 7}F{sub 1} transition can critically distinguish such sites. Hence, we find that the center involved in the hysteretic photochromic switching observed in GaN(Mg):Eu, proposed as the basis of a solid state qubit material, is not in fact Eu1, as previously reported, but a related defect, Eu1(Mg). Furthermore, the decomposition of the crystalfield distortions of Eu0, Eu1(Mg), and Eu1 into axial and non-axial components strongly suggests reasonable microscopic models for the defects themselves.
- OSTI ID:
- 22489282
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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