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Title: Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra

The oxygen vacancy model has been used to explain the magnetic and electrical transport properties of dilute magnetic semiconductors and resistive switching. In particular, some authors have claimed that they found a symmetric peak corresponding to the oxygen vacancies in O1s photoelectron spectra. In this paper, using X-ray photoelectron spectra with argon ion etching, it is shown that this symmetric peak may also be interpreted as being related to O{sup 1−} anions, rather than to oxygen vacancies.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)
  2. (China)
  3. No. 46 Research Institute of China Electronics Technology Group Corporation, Tianjin 300220 (China)
Publication Date:
OSTI Identifier:
22489281
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANIONS; ARGON IONS; ETCHING; MAGNETIC SEMICONDUCTORS; OXIDES; OXYGEN; PEAKS; SYMMETRY; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY