Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra

Journal Article · Mon Jan 11 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939976· OSTI ID:22489281

Wu, L. Q.; Li, Z. Z.; Qi, W. H.; Xue, L. C.; Ding, L. L.; Ge, X. S. ^[1]; Li, S. Q. ^[1]; Li, Y. C. ^[2]

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1. Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)
2. No. 46 Research Institute of China Electronics Technology Group Corporation, Tianjin 300220 (China)

The oxygen vacancy model has been used to explain the magnetic and electrical transport properties of dilute magnetic semiconductors and resistive switching. In particular, some authors have claimed that they found a symmetric peak corresponding to the oxygen vacancies in O1s photoelectron spectra. In this paper, using X-ray photoelectron spectra with argon ion etching, it is shown that this symmetric peak may also be interpreted as being related to O{sup 1−} anions, rather than to oxygen vacancies.

• OSTI ID: 22489281
• Journal Information: Applied Physics Letters, Vol. 108, Issue 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANIONS
ARGON IONS
ETCHING
MAGNETIC SEMICONDUCTORS
OXIDES
OXYGEN
PEAKS
SYMMETRY
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY