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Title: Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate

Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex (111) B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.
Authors:
; ; ; ; ; ; ;  [1]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22489280
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MONOCRYSTALS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; TRAPPING