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Title: Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.
Authors:
; ; ;  [1] ;  [2] ;  [3] ; ;  [4] ; ;  [5] ;  [6]
  1. School of Physics, The University of Melbourne, Victoria 3010 (Australia)
  2. School of Engineering, RMIT University, Melbourne, Victoria 3001 (Australia)
  3. SemiConductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
  4. IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy)
  5. ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, Victoria 3001 (Australia)
  6. ARC Centre of Excellence for Quantum Computing and Communication Technology, School of Physics, University of Melbourne, Victoria 3010 (Australia)
Publication Date:
OSTI Identifier:
22489275
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ETCHING; EXCITED STATES; MICROSCOPY; OXIDATION; OXYGEN; PHOTONS; SILICON; SILICON CARBIDES; SURFACES; TEMPERATURE RANGE 0273-0400 K