skip to main content

Title: Capping of rare earth silicide nanowires on Si(001)

The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [3]
  1. Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany)
  2. Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623 Berlin (Germany)
  3. IHP–Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder) (Germany)
Publication Date:
OSTI Identifier:
22489258
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; FILMS; LAYERS; NANOWIRES; RARE EARTHS; RECRYSTALLIZATION; RESOLUTION; SCANNING TUNNELING MICROSCOPY; SILICIDES; STACKING FAULTS; STRAINS; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY