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Title: Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22489256
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIRECT CURRENT; GALLIUM ANTIMONIDES; GHZ RANGE; ILLUMINANCE; INDIUM ARSENIDES; PHOTOVOLTAIC EFFECT; QUANTUM WELLS; SPIN