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Title: Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I{sub ds} of 4.2 A/mm, and a peak transconductance g{sub m} of 2880 mS/mm. Intrinsic current-gain cutoff frequency f{sub T} of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22489253
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; ELECTRONIC EQUIPMENT; EPITAXY; FIELD EFFECT TRANSISTORS; GHZ RANGE; GRAPHENE; LAYERS; LENGTH; SEMICONDUCTOR MATERIALS; SILICON CARBIDES