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Title: Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.
Authors:
; ; ; ;  [1] ; ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China)
  2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
  3. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
  4. DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy)
  5. IBM Research Division, Essex Junction, Vermont 05452 (United States)
Publication Date:
OSTI Identifier:
22489250
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; DEPTH; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FILMS; HAFNIUM OXIDES; LAYERS; LEAKAGE CURRENT; NANOSTRUCTURES; OPTICAL PROPERTIES; RELIABILITY; STRESSES; TRAPPING; TWO-DIMENSIONAL SYSTEMS