skip to main content

SciTech ConnectSciTech Connect

Title: Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH{sub 3} (methyl) bonds, the Si-CH{sub 2}-Si (methylene) bonds are not affected by 5.6 eV irradiation. On the other hand, the concentration of the Si-CH{sub 2}-CH{sub 2}-Si (ethylene) groups decreases during such UV exposure. More significant difference in alkylene reduction is observed when the films are exposed to VUV (7.2 eV). The ethylene groups are depleted by more than 75% while only about 40% methylene and methyl groups loss is observed. The different sensitivity of bridging groups to VUV light should be taken into account during the development of curing and plasma etch processes of low-k materials based on periodic mesoporous organosilicas and oxycarbosilanes. The experimental results are qualitatively supported by ab-initio quantum-chemical calculations.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1] ;  [4] ; ;  [1] ;  [5]
  1. Imec, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium)
  3. Leibniz-Institut für Oberflächenmodifizierung, Permoserstrasse 15, 04318 Leipzig (Germany)
  4. (Belgium)
  5. Department of Inorganic and Physical Chemistry, Centre for Ordered Materials, Organometallics and Catalysis (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium)
Publication Date:
OSTI Identifier:
22489249
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURING; ETHYLENE; FAR ULTRAVIOLET RADIATION; FILMS; IRRADIATION; LENGTH; LOSSES; MATERIALS; NANOSTRUCTURES; PERIODICITY; PLASMA; SENSITIVITY