Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Journal Article · Mon Jan 04 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939441· OSTI ID:22489247

Nan, Tianxiang; Emori, Satoru; Wang, Xinjun; Hu, Zhongqiang; Xie, Li; Gao, Yuan; Lin, Hwaider; Sun, Nian ^[1]; Peng, Bin; Liu, Ming ^[2]; Jiao, Jie; Luo, Haosu ^[3]; Budil, David ^[4]; Jones, John G.; Howe, Brandon M.; Brown, Gail J. ^[5]

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1. Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)
2. Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an 710049 (China)
3. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)
4. Department of Chemistry, Northeastern University, Boston, Massachusetts 02115 (United States)
5. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

• OSTI ID: 22489247
• Journal Information: Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANISOTROPY
CONTROL
DAMPING
ELECTRIC FIELDS
FERROELECTRIC MATERIALS
L-S COUPLING
MAGNETISM
MAGNETIZATION
MICROWAVE RADIATION
MODULATION
PHASE TRANSFORMATIONS
RELAXATION
STRAINS
SUBSTRATES
TUNING