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Title: Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.
Authors:
; ; ;  [1] ; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
  2. (United States)
  3. HGST, Inc., San Jose, California 95135 (United States)
  4. Singulus Technologies AG, Kahl am Main 63796 (Germany)
Publication Date:
OSTI Identifier:
22489244
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; MAGNESIUM OXIDES; NANOSTRUCTURES; SPIN; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT TUNNEL JUNCTIONS