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Title: Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.
Authors:
; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)
  2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  3. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
  4. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
Publication Date:
OSTI Identifier:
22489243
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; ANISOTROPY; ATOMS; DEPOSITS; EPITAXY; EXCHANGE INTERACTIONS; MAGNETIZATION; MAGNETORESISTANCE; MAPPING; NANOSTRUCTURES; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY