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Title: Microwave-induced zero-resistance state in two-dimensional electron systems with unidirectional periodic modulation

In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top of a heterojunction. The amplitude of the 2D electron gas modulation in the LSL was controlled by the gate voltage applied to the metallic strips. The LSLs with two different periods (a = 200 nm and 500 nm) were used to investigate the influence of microwave radiation with the frequency of 110–150 GHz on the 2D electron transport at the temperature T = 1.6 K in the magnetic field B < 1 T. We have found that zero-resistance states (ZRSs) appear under the microwave radiation in the 2D systems with a unidirectional periodic modulation. These ZRSs are located at the minima of commensurability oscillations.
Authors:
; ;  [1] ;  [2] ; ; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22489241
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; AMPLITUDES; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON GAS; ELECTRONS; GALLIUM ARSENIDES; GHZ RANGE 100-1000; HETEROJUNCTIONS; MAGNETIC FIELDS; MICROWAVE RADIATION; MODULATION; PERIODICITY; TWO-DIMENSIONAL SYSTEMS