Microwave-induced zero-resistance state in two-dimensional electron systems with unidirectional periodic modulation
- Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top of a heterojunction. The amplitude of the 2D electron gas modulation in the LSL was controlled by the gate voltage applied to the metallic strips. The LSLs with two different periods (a = 200 nm and 500 nm) were used to investigate the influence of microwave radiation with the frequency of 110–150 GHz on the 2D electron transport at the temperature T = 1.6 K in the magnetic field B < 1 T. We have found that zero-resistance states (ZRSs) appear under the microwave radiation in the 2D systems with a unidirectional periodic modulation. These ZRSs are located at the minima of commensurability oscillations.
- OSTI ID:
- 22489241
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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