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Title: Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction

We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the growth of the GaN layers was measured by in situ synchrotron X-ray diffraction. The lattice parameters in the directions parallel and normal to the surface showed significant deviation from the elastic strains expected for lattice-mismatched films on substrates up to a thickness of 10 nm. The observed lattice deformation was well explained by the incorporation of hydrostatic strains due to point defects. The results indicate that the control of point defects in the initial stage of growth is important for fabricating GaN-based optoelectronic devices.
Authors:
;  [1] ;  [2]
  1. Quantum Beam Science Center, Japan Atomic Energy Agency, 1-1-1 Koto, Sayo, Hyogo 679-5148 (Japan)
  2. Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 790-8577 (Japan)
Publication Date:
OSTI Identifier:
22489240
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEFORMATION; GALLIUM NITRIDES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; POINT DEFECTS; SILICON CARBIDES; STRAINS; SUBSTRATES; THICKNESS; X-RAY DIFFRACTION