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Title: Effective g-factors of carriers in inverted InAs/GaSb bilayers

We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [2] ;  [4]
  1. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China)
  2. (China)
  3. Teledyne Scientific and Imaging, Thousand Oaks, California 91630 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22489239
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; CARRIERS; COINCIDENCE METHODS; ELECTRIC POTENTIAL; ELECTRON DENSITY; FERMI LEVEL; GALLIUM ANTIMONIDES; HOLES; INDIUM ARSENIDES; LANDE FACTOR; LAYERS; SPECTRA; SPIN; ZEEMAN EFFECT