Effective g-factors of carriers in inverted InAs/GaSb bilayers

Journal Article · Mon Jan 04 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939230· OSTI ID:22489239

Mu, Xiaoyang ^[1]; Sullivan, Gerard ^[2]; Du, Rui-Rui ^[1]

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1. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China)
2. Teledyne Scientific and Imaging, Thousand Oaks, California 91630 (United States)

We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3.

• OSTI ID: 22489239
• Journal Information: Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER DENSITY
CARRIERS
COINCIDENCE METHODS
ELECTRIC POTENTIAL
ELECTRON DENSITY
FERMI LEVEL
GALLIUM ANTIMONIDES
HOLES
INDIUM ARSENIDES
LANDE FACTOR
LAYERS
SPECTRA
SPIN
ZEEMAN EFFECT