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Title: Defect-engineered optical bandgap in self-assembled TiO{sub 2} nanorods on Si pyramids

Transformation of self-assembled crystalline TiO{sub 2} nanorods to amorphous layer, and the corresponding impact on optical-bandgap (E{sub g}) on Si pyramids are investigated by irradiating with 50 keV Ar{sup +}-ions. Initially, E{sub g} is found to be reduced from 3.23 to 2.94 eV up to a fluence of 1 × 10{sup 16} ions/cm{sup 2}, and discussed in terms of the rise in oxygen vacancies (V{sub O}). However, a sudden increase in E{sub g} to 3.38 eV is detected at a fluence of 1 × 10{sup 17} ions/cm{sup 2} through evolution of voids by over-saturating V{sub O}, manifesting the appearance of degenerate states by shifting the Fermi level above the conduction band minimum via Burstein-Moss effect.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201 314 (India)
  2. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)
  3. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
Publication Date:
OSTI Identifier:
22489237
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON IONS; FERMI LEVEL; KEV RANGE 10-100; LAYERS; NANOSTRUCTURES; OXYGEN; TITANIUM OXIDES; VACANCIES; VOIDS