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Title: InAs based terahertz quantum cascade lasers

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.
Authors:
; ; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Vienna (Austria)
  2. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040 Vienna (Austria)
  3. Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna (Austria)
Publication Date:
OSTI Identifier:
22489227
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; CONFINEMENT; DESIGN; EMISSION; FABRICATION; GALLIUM ARSENIDES; HELIUM; INDIUM ARSENIDES; LASERS; LOSSES; MAGNETIC FIELDS; MASS; MOLECULAR BEAM EPITAXY; PHONONS; POTENTIALS; SCATTERING; WAVEGUIDES