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Title: Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e.,more » the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less
Authors:
;  [1] ;  [2] ; ; ; ; ; ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (Belgium)
  3. ASM, Kapeldreef 75, 3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22489212
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; FREQUENCY DEPENDENCE; GALLIUM NITRIDES; INTERFACES; METALS; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; TRANSISTORS; TRAPPING; TRAPS