skip to main content

Title: Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)
  2. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom)
  3. School of Physics, Shandong University, Jinan 250100 (China)
  4. (China)
Publication Date:
OSTI Identifier:
22489210
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEPOSITION; INTERFACES; LAYERS; MEMORY DEVICES; MOBILITY; NOISE; PERFORMANCE; RANDOMNESS; SCHOTTKY BARRIER DIODES; SPACE CHARGE; SPECTRA; SPECTRAL DENSITY; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THERMIONIC EMISSION; TRAPS; ZINC OXIDES