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Title: Mapping of axial strain in InAs/InSb heterostructured nanowires

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302 (India)
  2. Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza S. Silvestro 12, I-56127 Pisa (Italy)
  3. NEST-Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa (Italy)
Publication Date:
OSTI Identifier:
22489207
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL DEFECTS; ELECTRON DIFFRACTION; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; MAPPING; NANOWIRES; PHONONS; STRAINS; TOMOGRAPHY